BSS119 L6327

BSS119N OptiMOS™ Small-Signal-Transistor Product Summary Features VDS • N-channel RDS(on),max • Enhancement mode • Logic level (4.5V rated) 100 V VGS=10 V 6 W VGS=4.5 V 10 ID 0.19 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23 • 100% lead-free; RoHS compliant; Halogen free 3 1 2 Type Package Tape and Reel Information Marking Halogen free Packing BSS119N SOT23 H6327: 3000 pcs/ reel sSH Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 0.19 T A=70 °C 0.15 Pulsed drain current I D,pulse T A=25 °C 0.77 Avalanche energy, single pulse E AS I D=0.19 A, R GS=25 W 2.0 Reverse diode dv /dt dv /dt I D=0.19 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C 6 Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature A mJ kV/µs ±20 V 0.5 W -55 ... 150 °C 0 (2|I D|R DS(on)max, I D=0.15 A nA S 1) Performed on 40mm² FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB Rev 2.1 page 2 2012-05-10 BSS119N Parameter Values Symbol Conditions Unit min. typ. max. - 15.7 20.9 - 3.4 4.5 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 2.1 3.1 Turn-on delay time t d(on) - 2.7 - Rise time tr - 3.3 - Turn-off delay time t d(off) - 7.0 - Fall time tf - 18.8 - Gate to source charge Q gs - 0.05 - Gate to drain charge Q gd - 0.25 - Gate charge total Qg - 0.6 - Gate plateau voltage V plateau - 3.2 - V - - 0.19 A - - 0.77 - 0.8 1.1 V - 12 - ns - 5 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=50 V, V GS=10 V, I D=0.19 A, R G=6 W pF ns Gate Charge Characteristics V DD=50 V, I D=0.19 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.1 T A=25 °C V GS=0 V, I F=0.19 A, T j=25 °C V R=50 V, I F=0.19 A, di F/dt =100 A/µs page 3 2012-05-10 BSS119N 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.6 0.2 0.5 0.15 ID [A] Ptot [W] 0.4 0.3 0.1 0.2 0.05 0.1 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 103 1 10 µs 1 µs 100 µs 1 ms 0.1 ZthJA [K/W] 10 ms ID [A] DC 0.01 0.5 102 0.2 0.1 0.05 0.001 0.02 0.01 single pulse 0.0001 0.1 1 10 100 1000 VDS [V] Rev 2.1 101 0.0001 0.001 0.01 0.1 1 10 100 tp [s] page 4 2012-05-10 BSS119N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.8 10000 10 V 9000 4.5 V 8000 3V 3.3 V 3.5 V 4V 4V 0.6 7000 RDS(on) [mW] ID [A] 6000 0.4 5000 4000 3.5 V 4.5 V 3000 3.3 V 0.2 5V 10 V 2000 3V 1000 2.8 V 0 0 0 2 4 6 8 10 0 0.2 VDS [V] 0.4 0.6 0.8 0.6 0.8 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.8 0.8 0.7 0.6 0.6 25 °C 150 °C gfs [S] ID [A] 0.5 0.4 0.4 0.3 0.2 0.2 0.1 0 0 0 1 2 3 4 5 VGS [V] Rev 2.1 0.0 0.2 0.4 ID [A] page 5 2012-05-10 BSS119N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.19 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=13 µA parameter: I D 12000 2.4 10000 2 VGS(th) [V] 2.8 RDS(on) [mW] 14000 8000 max 6000 max typ 1.6 1.2 min 4000 0.8 typ 2000 0.4 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -10 40 Tj [°C] 90 140 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 102 100 25 °C 150 °C IF [A] C [pF] Ciss 101 150 °C, 98% 10-1 25 °C, 98% Coss Crss 100 10-2 0 10 20 30 40 50 60 70 80 90 100 VDS [V] Rev 2.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD [V] page 6 2012-05-10 BSS119N 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=0.19 A pulsed parameter: T j(start) parameter: V DD 1 10 9 20 V 80 V 8 7 50 V 100 °C 0.1 VGS [V] IAV [A] 6 25 °C 125 °C 5 4 3 2 1 0.01 0 1 10 100 1000 0 0.2 tAV [µs] 0.4 0.6 0.8 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 120 V GS 116 Qg 112 108 VBR(DSS) [V] 104 100 V gs(th) 96 92 88 Q g(th) Q sw Q gate 84 Q gs Q gd 80 -60 -20 20 60 100 140 180 Tj [°C] Rev 2.1 page 7 2012-05-10 BSS119N SOT23 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.1 page 8 2012-05-10 BSS119N Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.1 page 9 2012-05-10